IRF3315S
概要
利点
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard surface-mount power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
利点
- RoHS Compliant
- Low RDS(on)
- Industry-leading quality
- Dynamic dv/dt Rating
- Fast Switching
- Fully Avalanche Rated
- 175°C Operating Temperature
品質
サポート