CoolSiC™ MOSFETs Generation 2

Explore how the new CoolSiC™ MOSFET G2 trench MOSFET enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC-DC, DC-DC and DC-AC. Photovoltaic inverters, energy storage systems, EV charging, power supplies, motor drives and more belong to the many cases where SiC MOSFETs provide additional performance, compared to Si alternatives.

Power losses matter. Explore how the new CoolSiC™ MOSFET G2 trench technology improves on power delivery in common topologies used in AC/DC, DC/DC, DC/AC power schemes. Key figures-of-merit for both, hard-switching and soft-switching MOSFET operation, are improved by more than 20% compared to the previous generation. The fast switching capability, i.e. the signature of SiC MOSFETs, is in addition improved by more than 30%. As a result, G2 operates with lower power losses in all operation modes in photovoltaic inverters, energy storage installations, EV charging, UPS and more. With the example of three-phase power schemes, compared to the previous generation 1200 V CoolSiC™ G2 operates at 5-30% lower power losses depending on the load condition, enabling energy savings for every Watt processed in the field.

Further advancement of Infineon´s unique .XT interconnection technology (e.g. in discrete housings TO-263-7, TO-247-4) serves to overcome the common challenge of improving semiconductor chip performance while maintaining its thermal capability. The thermal capability is now 12% better for the new generation, boosting the chip figures-of-merit to a new level of SiC performance.

Combining the best of SiC: low power losses in small form factors. The lower is the on-resistance of a SiC MOSFET, the lower are the conduction losses, allowing more energy efficiency, power density and part count reduction. CoolSiC™ G2 MOSFET portfolios boost the lowest Rdson in the SiC MOSFET market. The introduction of best in class products in SMD packages, makes 7 mOhm rating in 650 V and 8 mOhm rating in 1200 V available in TO263-7 form factor. Improved package interconnect with .XT results in less thermal resistance, more output power, lower operating temperature.The power that can be delivered by an SMD form factor is increased by more than 60%, and raises the bar for power density possible in power conversion schemes.

Maximizing each Euro invested in SiC. Explore a series of new robustness features in CoolSiC™ MOSFET G2 products for reaching the best performance during long-term field operation.

The system designer can now benefit from a datasheet specification of maximum on-resistance at 150°C in 1200 V portfolios. The SiC MOSFET capability can be fully utilized when no additional margins due to uncertainty of distributions must be accounted for at elevated temperatures during nominal operation.

Overload operation up to a virtual junction temperature of 200°C is included in 1200 V CoolSiC™ MOSFET G2 datasheets and introduced first in the TO-263-7 package. For coping with overload events coming from e.g. grid fluctuations, the system designer can design for higher output currents compared to the previous generation, or reduce on cooling efforts. The specified avalanche robustness on datasheet level further eases the system design effort for such over-current events.

A strong immunity against unwanted turn-on events, a rugged body diode operation during hard commutation, and short-circuit capability are supported by datasheet specifications in CoolSiC™ MOSFET G2 products.

All modern Silicon power devices are trench based and have replaced the planar technologies so what about Silicon Carbide? For SiC, there are many similarities with the Silicon power MOSFET technology evolution when it comes to performance advantages by trench design. One more striking advantage comes in addition with trench design in SiC, namely reliability. Vertical interfaces show significantly lower defect density compared to lateral ones in SiC material.

This opens up a new optimization potential for matching performance and robustness features with reliability. Reliability is the fundament of every power device development at Infineon and CoolSiC™ MOSFET G2 trench technology maintains the high G1 reliability. DPM (defects per million) data based on all CoolSiC™ MOSFETs G1 sold, discretes and modules industrial grade, shows that product returns for SiC are even below silicon based power switches, a very mature technology. Infineon has also pioneered in application lifetime testing and certain tests are nowadays included in the JEDEC standard. The CoolSiC™ trench MOSFET design drives sustainable competitiveness for energy efficiency, now and in the future.

• 650 V/1200 V CoolSiC™ MOSFET G2
• Lowest available RDS_(on)
• Largest product portfolio
• Unique robustness features