IPB80N06S2-07 55V, N-Ch, 6.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™
Overview
Summary of Features
- N-channel - Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (lead free)
- Ultra low Rds(on)
- 100% Avalanche tested
Benefits
- world's lowest RDS at 55V (on) in planar technology
- highest current capability
- lowest switching and conduction power losses for highest thermal efficiency
- robust packages with superior quality and reliability
- Optimized total gate charge enables smaller driver output stages
Potential Applications
Videos
Training
- Be familiar with Infineon’s measures to reduce the failure rate and to prove the quality level of a product
- Identify the right product based on given target application requirements
- Get to know today`s fast growing automotive MOSFET market.
- Know more about Infineon`s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications.
- Learn how Infineon defines a true culture of quality.
- Get to know Infineon`s Zero Defect approach and how Infineon goes beyond the requiriments when it comes to automotive MOSFET qulification.
- Get to know Infineon’s Automotive MOSFET data sheet.
- Improve your understanding of the parameters and diagrams in the document, which will help you better evaluate the device’s limits and capabilities.
- Know the different 48 V applications for the new drivetrain architectures.
- Get an overview of Infineon`s comprehensive MOSFET portfolio.
- Have an overview of the converters needed in electric vehicles.
- Analyze the 2-quadrant converter topology in buck and boost mode and the half-bridge converter with center tap rectification topology.
- Recognize the different types of setups in the data sheets.
- Be able to calculate the junction-to-ambient thermal resistance value, the power losses, and the static DC current.
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