Press Pack IGBTs
Extreme energy. Ultimate run.
Direct Press Pack IGBTs with 4.5 kV offers outstanding features for best fit in HVDC, medium voltage drives and wind applications
The first Press Pack IGBT is a 4.5 kV 3000 A device with 125 mm pole piece diameter. In order to cover a lot of different applications and power ranges the innovative design of internal chip-stack and housing enables Infineon to create a perfect fitting portfolio with different current values and topologies. PPI devices with or without internal Freewheeling Diodes (FWD) will form a complete new high power IGBT portfolio.
Leading high voltage IGBT chip trench technology in combination with high reliable Press Pack technology with more than 40 years of proven field track records, quality and longest lifetime offer customers an outstanding, high performance solution for ultra-high power application such as HVDC, FACTS, DC-Breaker and drives applications which opens up new opportunities to optimize their high power application in terms or losses, reliability and cost.
The PPI-housing is hermetically sealed and specially designed to withstand failure events caused by the system: The PPI offers “short-on-fail” feature and an extremely robust case non rupture performance. Infineon upgrade its high power IGBT portfolio with this new IGBT family in Ceramic Disc Housings.
Blue prints for application specific stack designs available
- Easy to customize
- Compact design for more power density
- Fast time-to-market