5962R1821601VXC Infineon offers the space industry’s first radiation hardened, highly reliable, small footprint, 2Mb non-volatile SPI Ferroelectric RAM (F-RAM)
Overview
Our rad hard SPI F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications.
Summary of Features
- 2 Mb density
- SPI interface operating up to 25 MHz
- Infineon instant non-volatile write technology
- 10-trillon read/write cycle endurance
- 120 years data retention at +85°C
- Extremely low programming voltage (2V)
- 2.0 V–3.6 V operating voltage range
- Low operating current (10 mA max)
- –55°C to +125°C military temperature grade
- 16-pin ceramic SOP (CSOP)
- DLAM QML-V qualified SMD 5962-18216, 2Mb rad hard, SPI, F-RAM (CYRS15B102Q)
- Radiation performance
- TID: > 150 Krad (Si)
- SEL: > 114 MeV.cm2/mg [LET] @ 115°C
- SEU: IMMUNE
- SEFI: < 1.34 x 10-4 err/dev.day
- For flight devices, order DLAM QML-V part number 5962R1821601VXC
Potential Applications
- Data logging for calibration data for satellites
- Data storage for sensors and instruments
- Stand-alone boot code or embedded boot code storage for microcontrollers for cube sat payloads
- Secure key storage for data encryption
- Replacement for serial interface NOR flash and EEPROMs
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