CYPT15B101N-GGMB Infineon’s radiation hardened 1 Mb non-volatile Ferroelectric RAM (F-RAM) memory offers the utmost reliability and performance for extreme environments.
Overview
Our rad hard F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications. For flight devices, order DLAM QML-V part number 5962R2321302VXC.
Summary of Features
- 1 Mb density, (128K x 16)
- 10-trillion read/write cycles
- 120 years data retention at +85°C
- Low programming voltage (2V)
- 2.0 V–3.6 V operating range
- Low operating current (20 mA max)
- –55°C to +125°C military grade
- 44-pin ceramic TSOP (CTSOP)
- Prototype for flight devices
Potential Applications
- Data logging for calibration data for satellites
- Data storage for sensors and instruments
- Stand-alone boot code/embedded boot code storage
- for microcontrollers for cube sat payloads
- Secure key storage for data encryption
- Direct replacement for EEPROMs
Support
