5962R2321302VXC Infineon’s radiation hardened 1 Mb non-volatile Ferroelectric RAM (F-RAM) memory offers the utmost reliability and performance for extreme environments.
Overview
Our rad hard F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications.
Summary of Features
- 1 Mb density (128K x 8)
- 10-trillon read/write cycle endurance
- 120 years data retention at +85°C
- Extremely low programming voltage (2V)
- Low operating current (20 mA max)
- DLAM QML-V qualified SMD 5962-23213 --> Coming SOON!
- Radiation performance:
- TID: > 150 Krad (Si)
- SEL: > 96 MeV.cm2/mg [LET]@ 115°C
- SEU: IMMUNE
- SEFI: 5.35e-5 err/dev.day (standby mode)
- SEFI: IMMUNE (sleep mode)
Potential Applications
- Data logging for calibration data for satellites
- Data storage for sensors and instruments
- Stand-alone boot code or embedded boot code storage for microcontrollers for cube sat payloads
- Secure key storage for data encryption
- Direct replacement for EEPROMs
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