Infineon Reinforces Leadership in Memory for PC, Mobile and Network Systems and Samples First Single-Chip W-CDMA/UMTS RF Transceiver
- First silicon of Infineon’s DDR2 (second-generation DDR) memory chips.
- Engineering samples of a 1GB (gigabyte) DDR SO-DIMM (small-outline DIMM) for high-end notebook and laptop PCs.
- A new 512Mb SDRAM component in the company’s family of small-foot-print, low-power Mobile-RAM devices.
- Production release of Reduced Latency DRAM (RLDRAM) in 256 Mb density, and the availability of a RLDRAM Development Platform from The Memec Group, an Infineon distribution partner in North America.
- Infineon has started sampling the first fully integrated single-chip W-CDMA/ UMTS RF transceiver
For convenient access by print and on-line media, announcements are summarized below. For further information, please refer to the Web URLs, or contact the Media Relations contacts listed in this press release.
First Samples of 512Mb DDR2 SDRAMs Now Available
Infineon has begun internal qualification of 512Mb DDR2 (second-generation Double-Data-Rate) SDRAM. Targeted for use in next-generation servers, workstations, high-end PCs and notebooks, DDR2 memory will initially offer data rates per pin of 400 Mbps (megabits per second), 533 Mbps and 667 Mbps. Memory modules designed using the 533 Mbps data rate, for example, would have a bandwidth of 4.3 GBps (gigabytes per second).
The JEDEC compliant, 512Mb DDR2 chips, manufactured using Infineon`s next generation 110 nm DRAM process technology, are configured as quad-bank DRAMs, and will be available in x4, x8 and x 16 organizations. Additional features of the new components include a pre-fetch size of 4 bits, differential strobe and variable data-output impedance adjustment.
Infineon expects that DDR2 components will appear in end-user systems in 2004. Additional information about Infineon’s DDR2 memory products can be found at www.infineon.com/DDR2.
PC2100, 1GB DDR SO-DIMMs
Infineon has released first engineering samples of 1GB (GigaByte) DDR SO-DIMMs for high-end notebook and laptop PCs. The 1GB SO-DIMM uses eight 1Gb (Gigabit) components that are built by Infineon using dual 512Mb die in a single package. This packaging enables the early adoption of 1Gb DDR-I components compliant with the JEDEC PC2100 standard form factor. It uses a 200 pin connector, operates at 2.5 V and is organized in two 128Mb x 64 banks. The engineering sample price of the PC2100 module is $900. A PC2700-compliant version of the 1G module is planned to be available in the second quarter of 2003. Additional information about Infineon’s 1GB SO-DIMM can be found at
Mobile-RAM Family Expanded With 512Mb Component
The 512 Megabit (Mb) density extends Infineon’s Mobile-RAM family, which also includes 128Mb and 256Mb components. With footprint and stand-by power consumption that are both 50 percent smaller than conventional DRAMs, Mobile-RAM is ideally suited for use as main memory in handheld electronics devices, such as PDAs, smart phones, Web pads and digital cameras. Mobile-RAM operates at 2.5V, rather than the 3.3V of conventional SDRAMs, and its power consumption is further reduced by several integrated power management techniques. 512Mb Mobile-RAM is available now at sample quantity price of $40.00 each. Additional information about Infineon’s Mobile-RAM products can be found at www.infineon.com/Mobile-RAM.
RLDRAM in 256 Mb Density
With production volume of 256 Mb Reduced Latency DRAM (RLDRAM) now available, designers of networking equipment supporting data rates of 10 – 40 Gbps (OC-192 and OC-768) can optimize systems for data packet buffering, IP address look-up and fast cache applications. RLDRAM allows ultra fast random access, with row cycle times as fast as 25 ns, making it an excellent reduced cost replacement for SRAM components. Several companies offer development board solutions for system designers working with RLDRAM, including the Avalon Reference Design System from Avnet Design Services, and a reference board from companies of The Memec Group, a specialized global semiconductor distributor. More information about Infineon’s RLDRAM products can be found at www.infineon.com/memory/rldram.
Infineon to Sample RF Transceiver for W-CDMA/UMTS Applications
Infineon has started sampling the first fully integrated single-chip W-CDMA/ UMTS RF transceiver (IC PMB5698) to selected customers. The IC has been designed to be used in mobile W-CDMA- and UMTS/ GSM-applications according 3GPP requirements. The low current consumption helps to further increase stand-by and talk time of new 3rd generation handsets.
The high integrated single-chip eases significantly the design of a mobile application with the need for lowest component count and PCB space compared with separate receiver/transceiver implementations. The homodyne architecture of the IC simplifies drastically the frequency planning and eliminates the need for an IF (intermediate frequency) stage with additional components as SAW filters. The IC is packed in a single P-VQFN package with 40 pins and 0.5mm pitch.
Infineon has started sampling to a wider range of customers. Volume production is planned for 2nd half 2003.
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Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for the automotive and industrial sectors, for applications in the wired communications markets, secure mobile solutions as well as memory products. With a global presence, Infineon operates in the US from San Jose, CA, in the Asia-Pacific region from Singapore and in Japan from Tokyo. In fiscal year 2002 (ending September), the company achieved sales of Euro 5.21 billion with about 30,400 employees worldwide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol: IFX). Further information is available at www.infineon.com.