Infineon and Micron Team Up to Develop Reduced Latency DRAM
Munich, Germany / Boise, Idaho, USA May 30, 2001 Infineon Technologies AG (FSE, NYSE: IFX) and Micron Technology, Inc., (NYSE: MU) today announced that they signed an agreement to co-develop a new multi-generational family of Reduced Latency DRAM (RLDRAM) for high-performance memory applications.
Incorporating extensive input from networking industry leaders, these new memory devices will initially operate at data rates as high as 600Mbit/sec/pin while reducing latency to a fraction of competing architectures. The unique internal memory architecture allows an ultra-fast random access and will thereby close the gap between DRAM and SRAM. Infineon and Micron are committed to make RLDRAM the multi-sourced standard for high-performance memories in switches, routers and other high-bandwidth latency-sensitive applications.
Infineon and Micron will work closely together to ensure multiple sources for the new RLDRAMs by developing pin- and function-compatible products. Each company provides system expertise and product direction, delivering to customers the collective benefit of their wide range of market experience and innovative technology.
Micron is committing to this technology because it will drive the development of the memory products our customers need to design their future data networking systems, said Jerry Johnson, Microns Director of Strategic Marketing, Networking Products. RLDRAM is the most cost-effective means to achieve the high bandwidth low latency memories required by future generations of high speed data networks. We are excited to have the opportunity to work with Infineon in the development of multiple generations of Reduced Latency DRAM products.
"Our agreement goes far beyond an arrangement to merely develop common specifications within a multi-generational roadmap," said Dr. Ernst Strasser, Infineon's Marketing Director for Graphics and Specialty DRAM Memory Products. "The RLDRAM Co-development Agreement includes activities providing customers with the assurance of functionally compatible, high-performance RLDRAM architectures from each company. Collectively representing the most advanced technologies and a large share of the DRAM market, the commitment of Infineon and Micron to RLDRAM assures users these functionally compatible, high-performance memories will be widely available."
For additional information about Infineons product portfolio of DRAMs and modules, please visit the following URL: www.infineon.com/products/memory/
Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for applications in the wired and wireless communications markets, for security systems and smartcards, for the automotive and industrial sectors, as well as memory products. With a global presence, Infineon operates in the US from San Jose, CA, in the Asia-Pacific region from Singapore and in Japan from Tokyo. In the fiscal year 2000 (ending September), the company achieved sales of Euro 7.28 billion with about 29,000 employees worldwide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol: IFX). Further information is available at www.infineon.com.
Micron Technology, Inc. and its subsidiaries manufacture and market DRAMs, very fast SRAMs, Flash, other semiconductor components, memory modules, and personal computer systems. Microns stock is traded on the New York Stock Exchange (NYSE) under the symbol MU, and its Web site is www.micron.com.
Press contact for Micron Technology, Inc.:
Echo Sarlya, Phone +1 208 368-4400, Fax-on-demand: +1 800 239-0337