BAR64-02V

Überblick

This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its very low capacitance and very low forward resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end-solutions.

Zusammenfassung der Merkmale

  • Very low capacitance C = 0.23 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 GHz
  • Very low forward resistance RF = 1.4 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz
  • Low inductance Ls = 0.6 nH (typical)
  • Charge carrier lifetime τ = 75 ns (typical)
  • Industry standard SC79 package (1.6 mm x 0.8 mm x 0.55 mm)
  • Pb-free, RoHS compliant and halogen-free

Potentielle Zielanwendungen

Optimized for low bias current RF and high-speed interface switches in:

  • Wireless communications
  • High speed data networks
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