This Infineon RF PIN diode provides high-voltage handling capabilities, comes with low loss and offers low distortion levels.
Its low forward resistance, low capacitance and low inductance simplify design-in and support designers in creating versatile endsolutions.
Zusammenfassung der Merkmale
- Very low capacitance C = 0.22 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 Ghz
- Low forward resistance RF = 2.5 Ω (typical) at forward current IF = 10 mA and frequency f = 1 GHz
- Low signal distortion
- Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm)
- Pb-free, RoHS compliant and halogen-free
Optimized for low bias current RF and high-speed interface switches in:
- Wireless communications
- High speed data networks