800V CoolMOS™ P7
A benchmark in efficiency and thermal performance
With the 800V CoolMOS™ P7 series, Infineon sets a benchmark in 800V superjunction technologies and combines best-in-class performance with state-of-the-art ease-of-use. This new product family is a perfect fit for flyback based consumer SMPS applications. In addition, it is also suitable for PFC stages within consumer, as well as solar applications, fully covering the market needs in terms of its price/performance ratio.
This product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save bill of material cost and reduce assembly effort. The integrated Zener Diode ESD protection significantly improves ESD robustness, thus reducing ESD related yield loss.
This product family continues to deliver well recognized best-in-class CoolMOS™ quality. In addition, CoolMOS™ P7 offers a new best-in-class RDS(on): in DPAK a RDS(on) of 280mΩ is available, more than 50 percent lower than the nearest 800V MOSFET competitor. This new benchmark enables higher power density designs, BOM savings, as well as lower assembly cost.
The technology offers fully optimized key parameters to deliver best-in-class efficiency as well as thermal performance. As demonstrated at a 80W LED driver, bought on the market, the >45% reduction in Eoss and Coss as well as the significant improvement in Ciss and QG, compared to competitor technologies, lead to 0.5% higher efficiency at light load which helps to reduce standby power at the end application. At full load the observed improvement is up to 0.3% higher efficiency and 6°C lower device temperature.
EMI is a system level topic, and the optimization needs to be done on system level only. Nevertheless, a pure plug and play measurement at an Infineon 45W adapter reveals that 800V CoolMOS™ P7 shows similar EMI performance compared to Infineon’s previous technologies but also when compared to competitors’ technologies.
Compared to competition, the 800V CoolMOS™ P7 technology allows to integrate much lower RDS(on) values into small packages, such as a DPAK. This finally enables high power density designs at highly competitive price levels.
CoolMOS™ P7 sets a new benchmark in best-in-class DPAK RDS(on)
- High power density
- Lower BOM cost
- Less production cost
The complete P7 platform has been developed with an integrated Zener diode that is used as an ESD protection mechanism, which increases the overall device ruggedness up to HBM class 2 level.