IPL60R085P7

Überblick

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Zusammenfassung der Merkmale

Efficiency

  • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G

Ease-of-use

  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor R G
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Vorteile

Efficiency

  • Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency

Ease-of-use

  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated R G reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Potentielle Zielanwendungen

  • TV power supply
  • Industrial SMPS
  • Server
  • Telecom 
  • Lighting
Videos
Trainings

600V CoolMOS™ P7 superjunction MOSFET

Information on 600V CoolMOS™ P7 including target applications, topologies and key features.

700V CoolMOS™ P7 superjunction MOSFET

Information on 700V CoolMOS™ P7 for low power applications and the most important parameters related to flyback technologies.

800V CoolMOS™ P7 superjunction MOSFET

Information on 800V CoolMOS™ P7 including key applications, benefits and improved performance in flyback topology.

Qualität

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