StrongIRFET™ Power MOSFETs
Reliable and flexible: StrongIRFET™ power MOSFET family
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The diverse package offering includes innovative power packages such as the D2PAK, D2PAK-7pin, D2PAK-7pin Plus, DirectFET™ and TO-Leadless as well as compact designs such as the SuperSO8 (also known as PQFN-5x6). The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
The diverse selection is available in through-hole and SMD packages ideally suited for 2.5V, 5V and 10V gate drive voltage. Benefit from increased power densitiy, gate drive flexibility and reliable products.
StrongIRFET™ MOSFETs in new D²PAK 7pin+ package for battery powered applications
Infineon complements its StrongIRFET™ family with a 40V MOSFET packaged in D²PAK 7pin+. The new MOSFET family offers an extremely low RDS(on) of 0.65mOhms and the highest current carrying capability in the industry. This leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.
40V and 60V StrongIRFET™ - logic level gate drive
Infineon introduces an extension of the successful StrongIRFET™ family for battery-powered applications. The logic level gate drive allows designers to drive MOSFETs with only 5V V GS. This is ideal in applications where standard gate drive is not available such as brushed motor drives, BLDC motor drives and battery powered circuits.
StrongIRFET™ in Medium Can DirectFET™ - corner gate pad
Infineon introduces a new family of Medium Can DirectFET™ MOSFETs in the StrongIRFET™ family. The new family of DirectFET™ devices improves the layout of the gate by re-locating the gate pad to the corner of the die. The new layout increases the source contact area resulting in lower thermal resistance to the PCB and increases the scalability of the design.
Product portfolio 40V and 60V StrongIRFET™
|Part number||Breakdown voltage (V)||Package (outline)||Current rating (A)||R DS(on) typ/max. @ 4.5V (mΩ)|
|IRL7472L1||40||Large Can DirectFET™ package (L8)||375||0.52 / 0.97|
|IRL40SC228||40||D2PAK 7pin+||360||0.60 / 0.90|
|IRL40SC209||40||D2PAK 7pin+||360||0.80 / 1.10|
|IRL7486M||40||Medium Can DirectFET™ package (ME)||209||1.5 / 2.0|
|IRL40B209||40||TO-220||195||1.2 / 1.6|
|IRL40B212||40||TO-220||195||1.9 / 2.4|
|IRL40S212||40||D 2PAK||195||1.9 / 2.4|
|IRL40B215||40||TO-220||120||2.8 / 3.5|
|IRL60S216||60||D2PAK||195||1.8 / 2.2|
|IRL60SL216||60||TO-262||195||1.8 / 2.2|
|IRL60B216||60||TO-220||195||1.7 / 2.2|
Product portfolio StrongIRFET™ in Medium Can DirectFET™ package
|Part number||Package||Outline||V DS(V)||R DS(on) typ/max. @ 10V (mΩ)||I D(A)||Q G(nC)|
|IRF7480M||Medium Can DirectFET™||ME||40||0.9 / 1.2||217||123|
|IRF40DM229||Medium Can DirectFET™||MF||40||1.4 / 1.85||159||107|
|IRF7483M||Medium Can DirectFET™||MF||40||1.7 / 2.3||135||81|
|IRF60DM206||Medium Can DirectFET™||ME||60||2.2 / 2.9||130||133|
|IRF7580M||Medium Can DirectFET™||ME||60||2.9 / 3.6||114||120|
|IRF7780M||Medium Can DirectFET™||ME||75||4.5 / 5.7||89||124|