IGBT discretes
IGBT discrete market leadership through groundbreaking innovation and application focus
Striving for the highest standards in performance and quality, Infineon offers a comprehensive discrete IGBT portfolio that is second to none. New products are application-specific developed to achieve the highest value.
From 600V up to 1600V, we offer a wide range of IGBT voltage classes to meet different voltage requirements in each application. Our discrete IGBT package portfolio contains SMD (Surface Mount Device) packages, for example, D²PAK, DPAK, SOT-223, and through-hole packages, for example, TO220, TO220FP, TO247, TO247-4, TO247PLUS, TO-247PLUS-4 and TO247 Advanced Isolation packages.
We provide discrete IGBTs solutions with and without anti-parallel diode, which is an excellent fit to use in industrial, home appliance and automotive applications.
IGBT discrete portfolio
Infineon’s comprehensive IGBT discrete portfolio was developed to provide the highest value to applications along the entire energy chain. The package portfolio contains surface mount device (SMD) packages, through-hole packages, and advanced isolation packages. Find the right IGBT discrete for your application – it’s time to switch.
Application information
Infineon’s IGBT discrete portfolio helps you find the perfect fit for your design needs, addressing industrial, consumer, and automotive applications. With a range from 600 V to 1600 V, the products meet the different voltage requirements for each application.
With Infineon’s comprehensive portfolio of application specific discrete IGBTs, you can achieve the highest standards in performance and quality.
IGBT technology
IGBTs are capable of achieving the lowest possible switching losses due to their fast switching of electric currents. They combine the advantages of high current-carrying capabilities and high blocking voltages of a bipolar transistor with the capacitive, almost zero-power control. IGBTs can withstand very high voltages and are currently the dominant technology in applications where voltages exceed 600 V.
An IGBT does not inherently contain a freewheeling, or body diode by design. This diode, however, is necessary to protect the switch by providing a freewheeling path to prevent reverse current.
Do you know what we mean by short circuit withstand time in datasheets?
If not, this training will answer to that!
Thanks to its superior controllability, humidity robustness and short-circuit ruggedness, Infineon’s IGBT7 T7 delivers the highest electrical performance among short-circuit devices.
Curious to know more? Watch this training.
In this training you will find out that a power factor correction (PFC) in an appliance connected to the distribution grid, reduces power losses and improves the harmonics fed into the grid.
Furthermore, we will also show you the different PFC topologies and make you familiar with the TRENCHSTOP™ 5 WR6 family optimized for AirCon PFC and respective WR6 evaluation board.
This training introduces RC-H6 650 V Reverse Conducting IGBT technology for half-bridge induction cooking.
In this training, we will show you step by step where and how to access Infineon SPICE and PLECS simulation models for its discrete IGBTs and CoolSiC™ products.
We will also show how to use these models and tools in an offline and online simulation.
In this training, we will show you step by step where and how to access Infineon PLECS simulation models for its discrete IGBTs and CoolSiC™ products as well as online simulation tools.
We will also show you the differences between hard and soft switching models.
Are you familiar with the structure of Infineon discrete insulated-gate bipolar transistor datasheets?
And did you know that a new format was recently released?
This is what we will cover!
For more information click here
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
