IGBT Discretes

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IGBT Discrete market leadership through groundbreaking innovation and application focus

Striving for the highest standards in performance and quality, Infineon offers a comprehensive discrete IGBT portfolio that is second to none. New products are application-specific developed to achieve the highest value.

From 600V up to 1600V, we offer a wide range of IGBT voltage classes to meet different voltage requirements in each application. Our discrete IGBT package portfolio contains SMD (Surface Mount Device) packages, for example, D²PAK, DPAK, SOT-223, and through-hole packages, for example, TO220, TO220FP, TO247, TO247-4, TO247PLUS, TO-247PLUS-4 and TO247 Advanced Isolation packages.

We provide discrete IGBTs solutions with and without anti-parallel diode, which is an excellent fit to use in industrial, home appliance and automotive applications.

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Related Information

Recommended documents

Infineon EiceDRIVER™ gate driver ICs Selection guide 2019 - Every switch needs a driver
Power and Sensing Selection Guide 2019
Simulation
Videos

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Infineon’s 600 V-650 V IGBT discretes - Portfolio Overview

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Trainings
RC-H6 650 V Reverse Conducting IGBT

This training introduces RC-H6 650 V Reverse Conducting IGBT technology for half-bridge induction cooking.

Thanks to its superior controllability, humidity robustness and short-circuit ruggedness, Infineon’s IGBT7 T7 delivers the highest electrical performance among short-circuit devices.
Curious to know more? Watch this training.

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With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

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