FF3MR12KM1H
综述
62 mm CoolSiC™ MOSFET half bridge module 1200 V, 2.9 mΩ G1 in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM)
特征描述
- High current density
- Low switching losses
- Superior gate oxide reliability
- Robust integrated body diode
- High cosmic ray robustness
- High speed switching module
- Symmetrical module design
- Standard construction technique
优势
- Minimizes cooling efforts
- Reduction in volume and size
- Reduced system costs
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