碳化硅CoolSiC™ MOSFET模块-英飞凌(infineon)官网

英飞凌提供范围广泛的硅IGBT和CoolSiC MOSFET车用功率模块（power module），可适配多种混合动力汽车和电动汽车应用：动力电机逆变器（将来自高压蓄电池的直流电转化为驱动电机所需的交流电）、车载电池充电器、辅助逆变器、HV/LV DC-DC转换器以及燃料电池电动汽车 (FCEV) 的特定应用，如燃料电池空气压缩机和DC-DC升压转换器。

This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.

The switching performance in particular is influenced by the chip's inherent properties, the device's operating conditions and the external circuitry. Optimizing operating conditions and circuitry can significantly improve the device performance in an application.

Circuit designers benefit from SPICE compact models that they can use in computer simulation to understand, troubleshoot and optimize the static and dynamic device behavior of applications through virtual prototyping.

This training explains the characteristics and use cases of simulation models offered by Infineon for CoolSiC™ MOSFETs, what to use them for and how to use them effectively.  

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This training provides an insight about the system benefits of wide-bandgap devices, which will conquer market share in areas where power density, efficiency and/or battery range are decisive. The training focuses on two applications, mobile chargers and on-board chargers, and will talk about the challenges faced by the solutions today and how SiC and GaN provide next levels of performance.

观看我们的网络研讨会，了解更多关于硅材料与碳化硅和氮化镓功率器件在高、低功率应用中的技术定位。.

By the end of this training, you will be familiar with CoolSiC™ MOSFET 1200 V M1H technology for Easy modules and with Infineon ever-expanding Easy module portfolio in the area of wide band gap material and know about the key features and benefits that are coming along with our latest M1H 1200 V series.

Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.

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您如果想成为 CoolSic™ 分立器件和 .XT 技术的专家，请观看此视频！

随着电动汽车市场的不断壮大，行业对充电桩的性能提出了更多要求。

本次在线学习将向您介绍 CoolSiC™ MOSFET 的出现改善了充电桩行业，使电动汽车充电器更小、更快、更高效。

本培训将向您介绍 CoolSic™ 将如何帮助设计下一代伺服驱动器。

驱动CoolSiC™   MOSFET 比你想象的容易的多。这个微学习会向你展示CoolSiC™   MOSFET甚至可以用0V门级电压关断。

通过本培训，您将学习如何计算碳化硅 MOSFET 的参考栅极电阻值，如何根据峰值电流和功耗要求确定合适的栅极驱动 IC，以及如何根据最差情况在实验室环境中微调栅极电阻值。

了解如何使用英飞凌 CoolSiC™ MOSFET SPICE 紧凑型模型优化器件在其应用中的特性。

在本视频中，您将重点比较 IGBT 和 SiC MOSFET 的功率处理能力，了解在为特定应用确定 IGBT 或 MOSFET 尺寸时需要考虑的不同方面。

了解并联 SiC MOSFET 模块的原因、栅极驱动器和电源布局设计的主要挑战和解决方案，并熟悉优化的系统回路电感，以最大限度地降低开关损耗。

了解 SiC MOSFET 模块并联背后的原因，以及栅极驱动器和电源布局设计的关键挑战和解决方案。了解优化的系统回路电感，最大限度降低开关损耗的解决方案。

了解 1500 V 光伏系统的最新发展趋势、挑战和技术，接受 1500 V 光伏市场全面解决方案培训。

• 区分英飞凌 CoolSiC™ 解决方案在目标应用中的特性和优势，并了解英飞凌可完全扩展的 CoolSiC™ 产品系列，以应对此汽车市场转型
• 解释在汽车应用中越来越多地引入碳化硅技术的原因

通过观看本次在线学习，您将：

• 了解封装电感
• 了解宽禁带晶体管更易受到封装电感影响的原因，以及
• 判断哪些英飞凌封装类型具有较低的电感

英飞凌在所有 3 种主要的功率半导体技术方面都能提供值得信赖的专业技术。查看如何在 AC-DC 应用中对其进行定位！ 

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英飞凌 650V CoolSiC™ MOSFET 可完美应对不断发展的大趋势：更高的效率和功率密度。

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650 V CoolSiC™ 技术参数与 600 V CoolMOS™ CFD7 的直接比较。

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了解主要目标拓扑结构和 650 V CoolSic™ 必须包含的优势。

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了解关键设计信息，充分发挥 650 V CoolSiC™ 的优势。

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