碳化硅 MOSFET 模块
CoolSiC™ Silicon Carbide MOSFET module technology in different packages and topologies
Power modules with CoolSiC™ MOSFET open up new opportunities for inverter designers to realize never before seen levels of efficiency and power density. In addition, Silicon Carbide (SiC) is tailoring to application needs by different available topologies from 45 mOhm to 2 mOhm RDS(on).
Available in different configurations such as 3-level, dual, fourpack, sixpack or as booster, our 1200V SiC MOSFET modules offer a superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses.
All EasyPACK™, EasyDUAL™ and 62mm CoolSiC™ MOSFET power modules can be ordered with pre-applied Thermal Interface Material (TIM).
Silicon Carbide (SiC) Forum
The SiC web forum provides you with a platform for exchanging ideas with the community, asking our Silicon Carbide experts for advice and for sharing your experience with CoolSiC™ MOSFET modules and discretes.
SiC MOSFET 650 V and 1200 V Gate Driver ICs
Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.
> More about our EiceDRIVER™ ICs for Silicon Carbide MOSFETs
CoolSiC™ MOSFET Webinars
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.
CoolSiC™ MOSFET Microlearnings
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
Get to know paralleling IGBT power modules with SiC MOSFETs can be exacerbated due to the much faster device switching speeds, motivation behind paralleling SiC MOSFET modules, key challenges and solutions for both gate driver and power layout design and optimized system loop inductance to minimize switching losses.
Get to know paralleling IGBT power modules with SiC MOSFETs can be exacerbated due to the much faster device switching speeds, motivation behind paralleling SiC MOSFET modules, key challenges and solutions for both gate driver and power layout design and optimized system loop inductance to minimize switching losses.
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