碳化硅 MOSFET 模块

综述

CoolSiC™ Silicon Carbide MOSFET module technology in different packages and topologies

Power modules with CoolSiC™ MOSFET open up new opportunities for inverter designers to realize never before seen levels of efficiency and power density. In addition, Silicon Carbide (SiC) is tailoring to application needs by different available topologies from 45 mOhm to 6 mOhm RDS(on).

Available in different configurations such as 3-level, dual, fourpack, sixpack or as booster, our 1200V SiC MOSFET modules offer a superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses.

All EasyPACK™ and EasyDUAL™ CoolSiC™ MOSFET power modules can be ordered with pre-applied Thermal Interface Material (TIM) as well.

产品
亮点

Benefits

  • Higher frequency operation
  • Increased power density
  • Highest efficiency for reduced cooling effort
  • Reduce system and operational cost

Features

  • About 80% lower switching losses compared to Si
  • Superior gate oxide reliability
  • Intrinsic body diode with low reverse recovery charge
  • Highest threshold voltage of Vth > 4V

Silicon Carbide (SiC) Forum

The SiC web forum provides you with a platform for exchanging ideas with the community, asking our Silicon Carbide experts for advice and for sharing your experience with CoolSiC™ MOSFET modules and discretes.

> Register today and join the conversation!

SiC MOSFET 1200 V Gate Driver ICs

Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.

> More about our EiceDRIVER™ ICs for Silicon Carbide MOSFETs

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