碳化硅 MOSFET 模块
采用不同封装和拓扑设计的CoolSiC™碳化硅MOSFET模块技术
采用CoolSiC™ MOSFET的功率模块为逆变器设计人员实现前所未有的效率和功率密度水平带来了新机遇。此外， 碳化硅（SiC）系列还通过不同的拓扑设计来满足各种应用需求。（45 mOhm -2 mOhm RDS(on)）
我们的1200V SiC MOSFET模块具有多种不同的配置，如三电平、双单元、四单元、六单元或Boost升压配置，通过先进的沟槽设计、同类最佳的开关性能和传导损耗和出色的栅极氧化层可靠性。
用户不仅可以为所有EasyPACK™、EasyDUAL™和62mm CoolSiC™功率模块订购预涂热界面材料（TIM）版本，而且还可以选购其它性能版本，比如采用高性能氮化铝（AIN）陶瓷衬底的Easy模块，它可显著提高RthJH热性能。
Silicon Carbide (SiC) Forum
SiC论坛为您提供了交流想法并分享经验的平台，在这里我们的SiC器件及应用专家为您提供有关CoolSiC™ MOSFET模块和单管的建议。
SiC MOSFET 1200 V门极驱动芯片
CoolSiC™ MOSFET等超快速开关器件的完美使用需要性能优异的门极驱动。因此，建议选择基于英飞凌无铁芯变压器技术的隔离驱动EiceDRIVER™芯片
CoolSiC™ MOSFET Webinars
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.
CoolSiC™ MOSFET Microlearnings
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
驱动CoolSiC™ MOSFET 比你想象的容易的多。这个微学习会向你展示CoolSiC™ MOSFET甚至可以用0V门级电压关断。
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
See how to optimize devices’ behavior in their applications with Infineon’s SPICE Compact Models for CoolSiC™ MOSFETs.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
Learn about the motivation behind paralleling SiC MOSFET modules, what are the key challenges and solutions for both gate driver and power layout design and get familiar with optimized system loop inductance to minimize switching losses.
Recognize the motivation behind paralleling of the SiC MOSFET modules, as well as key challenges and solutions for both gate driver and power layout design. Learn about optimized system loop inductance to minimize switching losses solution.
Get know recent trends in 1500 Volt PV system, challenges and technical and gain educated comprehensive solution for the 1500 Volt PV market.
- Distinguish the features and benefits of Infineon’s CoolSiC™ solutions in target applications and identify Infineon’s fully scalable CoolSiC™ portfolio to meet this automotive market transition
- Explain the reasons for the increasing introduction of silicon carbide technology in the automotive applications
