IMYH200R012M1H CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package

Überblick

The CoolSiC™ 2000 V 12 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.

Zusammenfassung der Merkmale

  • VDSS = 2000 V for high DC-link systems up to 1500 VDC
  • Very low switching losses
  • Innovative HCC package
  • 14 mm pin to pin creepage
  • 5.4 mm clearance distances
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V
  • Robust body diode for hard commutation
  • .XT interconnection technology for best-in-class thermal performance
  • Improved humidity robustness 

Vorteile

  • High power density
  • Excellent reliability
  • Highest efficiency
  • Ease of design
product picture for CoolSiC™ 2000 V SiC Trench MOSFET in TO-247-4-PLUS-HCC package
Diagramme
Videos
The .XT interconnection technology in CoolSiC™ discretes

If you want to be an expert of CoolSiC™ discretes and the .XT technology, watch this video!

This training helps you understand how to optimize devices’ behavior in their applications with Infineon’s SPICE Compact Models for CoolSiC™ MOSFETs.

In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs. Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.

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