FF33MR12W1M1HP_B11 集成 CoolSiC™ MOSFET 的半桥 1200V 模块

综述

 

EasyDUAL™ 1B 1200 V, 33 mΩ 半桥模块采用了第一代增强型CoolSiC™ MOSFET 、集成式NTC 温度传感器、预涂热界面材料和 PressFIT 压接技术。

特征描述

  • 12 毫米高的同类最佳封装
  • 将领先宽禁带材料与 Easy 模块封装相结合
  • 模块杂散电感极低
  • 较宽的反偏安全工作区 (RBSOA)
  • 采用第一代增强型沟槽技术的1200 V CoolSiC™ MOSFET 
  • 建议栅极驱动电压窗口增大：从 +15 扩展至 +18 V，从 0 V 扩展至 -5 V
  • 扩展的最大栅-源电压：+23 V 和 -10 V
  • 过载条件下工作结温 Tvjop 高达 175°C 
  • PressFIT 引脚
  • 集成 NTC 温度传感器
  • 热界面材料

优势

  • 出色的模块效率，实现系统成本优势
  • 提高系统效率，降低冷却需求
  • 支持更高频率，提高功率密度
  • 最佳性价比，有助降低系统成本
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视频

Customers of power electronics require ever more modern, easy connection technologies, which also provide a higher reliability to meet the trends to higher temperatures and new applications.

培训

This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.

With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.

This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.

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