CoolSiC™ Hybrid Devices

Use of a SiC diode in combination with a silicon IGBT allows to extend the capabilities of the IGBT technology reaching the next level efficiency with hybrid power switch devices. The CoolSiC™ Hybrid products create the price-performance bridge between pure Si-solution and high performance of entirely SiC MOSFET designs. 

• CoolSiC™ hybrid discretes: Fast plug & play upgrade of available discrete designs to a higher efficiency, as a rule of thumb – 0.1% efficiency increase for each 10kHz – i.e. 0.23% efficiency increase for working frequency of 23kHz.
• CoolSiC™ hybrid modules: Form the ideal bridge between purely Silicon-based and Silicon Carbide solutions. They combine IGBT chips with SiC diodes to further extend the capacity of the IGBT technology.

The CoolSiC™ hybrid device co-packed with SiC diode significantly reduces switching losses at almost unchanged dv/dt and di/dt values. Ultra fast IGBTs in Kelvin-emitter 4-pin packages enable reduction of switching losses at the expense of higher dv/dt or di/dt values (and thus worse EMC). Fast switching S5 TRENCHSTOP™ 5 650 V IGBT or ultra fast switching H5  TRENCHSTOP™ 5 IGBT co-packed with free- wheeling Gen6 SiC diode in TO-247- 4pin package. In addition to the discrete portfolio we offer our best-in-class 12mm height baseplate-less Easy modules in which we use our latest TRENCHSTOP™ technology S7 and H5 co-packed with a CoolSiC™ Schottky Diode.