600V CoolMOS™ S7
The high-voltage superjunction MOSFET family delivering the best price/performance for low-frequency switching applications
The S7 family of high-voltage superjunction MOSFETs sets a new benchmark for power density, uniquely fitting a 22mOhm RDS(on) chip into an innovative small TO-leadless (TOLL) SMD package and, in the immediate future, fitting a 10mOhm RDS(on) chip into a top-side-cooled SMD package.
By focusing on applications where switching losses are not relevant, the CoolMOS™ S7 SJ MOSFET enables stripping-off the features related to switching performance, optimizing cost while reaching very low RDS(on) values. This enables the CoolMOS™ S7 SJ MOSFET to meet the requirements for low conduction losses at the best cost, delivering the best price/performance while keeping Infineon’s high quality standards.
Infineon’s 600V CoolMOS™ S7 superjunction MOSFETs target applications where the MOSFETs are switched at low frequency, such as active-bridge rectification, inverter stages, in-rush relays, PLCs, HV DC lines, power solid-state relays, and solid-state circuit breakers.
In PFC active-bridge rectification 600V CoolMOS™ S7 enables almost 1% efficiency increase with a very contained design effort.
For solid-state relays and solid-state circuit breakers designs, CoolMOS™ S7 MOSFETs are complemented by the rest of the CoolMOS™ family of superjunction MOSFETs, IGBT, OptiMOS™ low-voltage and medium-voltage MOSFETs, galvanic isolated gate drivers and PVI (photovoltaic isolators).