2ED3145MC12L 6.5 A, 5.7 kV (rms) dual-channel isolated gate driver with deadtime control, UL 1577 certified, 11 V UVLO

综述

EiceDRIVER™ Compact dual-channel isolated gate driverr with 6.5 A sinking and 6A sourcing peak output current in a 14-pin DSO wide body package for IGBTs, MOSFETsand SiC MOSFETs.

It offers dead-time control (DTC) functionality and independent channel operation. This allows for operation
as a dual-channel low-side driver, a dual-channel high-side driver or a half-bridge gate driver with a configurable dead-time.

特征描述

  • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
  • 2300 V functional offset voltage capable for selected applications
  • Galvanically isolated coreless transformer gate driver
  • Up to 6.5 A typical peak output current
  • 39 ns propagation delay
  • 35 V absolute maximum output supply voltage
  • High common-mode transient immunity CMTI > 200 kV/µs
  • Active shutdown and short circuit clamping
  • 3.3 V and 5 V input supply voltage
  • Enable pin
  • 11 V/ 12 V undervoltage lockout (UVLO) protection with hysteresis

优势

  • 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance
  • Tight part-to-part propogation delay skew of 8 ns max
  • Tight channel-to-channel propogation delay skew of 5ns max
  • Dual-channel configuation reduces footprint
  • Dead time control
  • UL 1577 VISO = 6.84 kV (rms) for 1 s, VISO = 5.7 kV (rms) for 1 min
  • IEC 60747-17 (planned) with VIORM = 1767 V (peak, reinforced)
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