栅极驱动器 IC
EiceDRIVER™ 栅极驱动器，用于驱动MOSFETs，IGBTs，碳化硅MOSFET， 以及氮化镓HEMT
栅极驱动器 IC 子类别
每个功率器件都需要一个驱动芯片——合适的驱动芯片让您事半功倍。电力电子应用是基于功率器件技术。而所有功率器件都需要合适的栅极驱动器解决方案。因此，我们提供500多种 EiceDRIVER™ 栅极驱动器，适用于任何功率器件，和任何终端应用。
EiceDRIVER™ 栅极驱动器提供从0.1 A到10 A的一系列的典型输出电流选项。具有全面的保护功能，包括快速短路保护（DESAT），有源米勒钳位，直通短路保护，故障报告，关断，过流保护。使得这些驱动适用于包括CoolGaN™和 CoolSiC™在内的所有功率器件。下载全新的栅极驱动选型指南2019
Select one of our product highlights for detailed information
Certificates
| Part Numbers | UL 1577 (Vrms) | VED0884-11 Reinforced |
EN 60950-1* | EN 62368-1 | EN 61010-1 | GB4943.1 | ||||||||
| 2250 | 2500 | 3000 | 3750 | 5000 | 5700 | Basic | Reinforced | Basic | Reinforced | Basic | Reinforced | |||
| 2EDS8165H | √ | √ | √ | √ | √ | |||||||||
| 2EDS8265H | √ | √ | √ | √ | √ | |||||||||
| 2EDS9265H | ||||||||||||||
| 2EDF7275F | ||||||||||||||
| 2EDF7175F | ||||||||||||||
| 2EDF9275F | ||||||||||||||
| 2EDF7275K | ||||||||||||||
| 2EDF7235K | ||||||||||||||
| 2EDR8259H | √ | √ | √ | √ | ||||||||||
| 2EDR7259X | √ | √ | √ | √ | ||||||||||
| 2EDR8259X | √ | √ | √ | √ | ||||||||||
| 2EDR9259X | √ | √ | √ | √ | ||||||||||
| 2EDB8259F | √ | |||||||||||||
| 2EDB7259Y | √ | |||||||||||||
| 2EDB8259Y | √ | |||||||||||||
| 2EDB8259Y | √ | |||||||||||||
| 2EDB7259K | √ | √ | √ | |||||||||||
| 2EDB8259K | √ | √ | √ | |||||||||||
| 2EDB7259A | √ | √ | √ | |||||||||||
| 2EDB8259A | √ | √ | √ | |||||||||||
| Part Numbers | UL 1577 (Vrms) | |||||
| 2250 | 2500 | 3000 | 3750 | 5000 | 5700 | |
| 1ED020I12-B2 | √ | |||||
| 1ED020I12-BT | √ | |||||
| 1EDC05I12AH | √ | |||||
| 1EDC10I12MH | √ | |||||
| 1EDC20H12AH | √ | |||||
| 1EDC20I12AH | √ | |||||
| 1EDC20I12MH | √ | |||||
| 1EDC30I12MH | √ | |||||
| 1EDC40I12AH | √ | |||||
| 1EDC60H12AH | √ | |||||
| 1EDC60I12AH | √ | |||||
| 1EDI20I12SV | ||||||
| 1EDS20I12SV | √ | |||||
| 1EDU20I12SV | √ | |||||
| Part Number | UL 1577 (Vrms) | VDE0884-11 | |||||
| 2250 | 2500 | 3000 | 3750 | 5000 | 5700 | Reinforced | |
| 1ED3120MC12H | √ | √ | |||||
| 1ED3121MC12H | √ | √ | |||||
| 1ED3122MC12H | √ | √ | |||||
| 1ED3123MC12H | √ | √ | |||||
| 1ED3124MC12H | √ | √ | |||||
| 1ED3131MC12H | √ | √ | |||||
| 1ED3431MC12M | √ | √ | |||||
| 1ED3461MC12M | √ | √ | |||||
| 1ED3491MC12M | √ | √ | |||||
| 1ED3830MC12M | √ | √ | |||||
| 1ED3860MC12M | √ | √ | |||||
| 1ED3890MC12M | √ | √ | |||||
| 1ED3120MU12H | √ | ||||||
| 1ED3121MU12H | √ | ||||||
| 1ED3122MU12H | √ | ||||||
| 1ED3123MU12H | √ | ||||||
| 1ED3124MU12H | √ | ||||||
| 1ED3131MU12H | √ | ||||||
| 1ED3431MU12M | √ | ||||||
| 1ED3461MU12M | √ | ||||||
| 1ED3491MU12M | √ | ||||||
| 1ED3830MU12M | √ | ||||||
| 1ED3860MU12M | √ | ||||||
| 1ED3890MU12M | √ | ||||||
| 1ED3124MU12F | √ | ||||||
| 1ED3125MU12F | √ | ||||||
| 1ED3240MC12H | √ | √ | |||||
| 1ED3241MC12H | √ | √ | |||||
| 1ED3250MC12H | √ | √ | |||||
| 1ED3251MC12H | √ | √ | |||||
| 1ED3320MC12N | √ | √ | |||||
| 1ED3321MC12N | √ | √ | |||||
| 1ED3322MC12N | √ | √ | |||||
| 1ED3323MC12N | √ | √ | |||||
| 1ED3140MU12F | √ | ||||||
| 1ED3141MU12F | √ | ||||||
| 1ED3142MU12F | √ | ||||||
| 1ED3126MU12F | √ | ||||||
| 1ED3127MU12F | √ | ||||||
| 1ED3126MC12H | √ | √ | |||||
| 1ED3127MC12H | √ | √ | |||||
| 1ED3128MC12H | √ | √ | |||||
| 1ED3129MC12H | √ | √ | |||||
| Part Numbers | UL 1577 (Vrms) | VDE0884-11 Reinforced | |||||
| 2250 | 2500 | 3000 | 3750 | 5000 | 5700 | ||
| 1ED020I12FA2 | √ | ||||||
| 2ED020I12FA | √ | ||||||
| 1ED020I12FTA | √ | ||||||
| 1EDI2001AS | √ | ||||||
| 1EDI2002AS | √ | ||||||
| 1EDI2010AS | √ | ||||||
| 1EDI2003AS | √ | ||||||
| 1EDI2004AS | √ | ||||||
| 1EDI3020AS | √ | √ (pending) | |||||
| 1EDI3021AS | √ | √ (pending) | |||||
| 1EDI3023AS | √ | √ (pending) | |||||
| 1EDI3030AS | √ | √ (pending) | |||||
| 1EDI3031AS | √ | √ (pending) | |||||
| 1EDI3033AS | √ | √ (pending) | |||||
| 1EDI3050AS | √ | √ (planned) | |||||
| 1EDI3051AS | √ | √ (planned) | |||||
| 1EDI3025AS | √ | √ (planned) | |||||
| 1EDI3035AS | √ | √ (planned) | |||||
| 1EDI3040AS | √ | √ (planned) | |||||
EiceDRIVER™ 栅极驱动器芯片技术
英飞凌和国际整流器公司（International Rectifier ）数十年的专业应用知识和技术发展凝练出一系列栅极驱动器 IC, 适用于硅和宽带隙功率器件，例如 MOSFET、分立式IGBT、IGBT 模块、SiC MOSFET 以及 GaN HEMT。我们提供优质的产品系列：电气隔离栅极驱动器, 通过汽车认证的栅极驱动器, 200 V, 500-700 V, 1200 V 电平转换栅极驱动器, 以及非隔离低边驱动器 。
我们的产品组合涵盖各种配置、电压等级、隔离级别、保护功能和封装选项。先进的分立式开关系列需要调整栅极驱动电路，以充分利用其容量和能力。无论是驱动分立器件还是模块，性能出众的栅极驱动配置对于所有电源开关而言必不可少。
EiceDRIVER™ gate driver IC applications
我们的 EiceDRIVER™栅极驱动器提供了先进的功能，如集成自举二极管 (BSD)，过流保护(OCP)，停机关断，故障报告，使能，输入过滤器, OPAMP, DESAT保护，可编程的死区时间，直通短路保护, 有源米勒箝位，有源关断，独立的拉电流和灌电流输出引脚，短路电流钳位，软关断，两电平关断，电气隔离(功能隔离, 基本隔离和增强隔离)等等。
理想的解决方案适用于工业电机驱动、太阳能逆变器、汽车、电动汽车充电桩、机器人、UPS、服务器和通信电源、白色家电和小家电、电池驱动应用和高电压照明等市场的数百种终端应用。
白皮书：全新小家电市场中的功率器件选择
更高能效，外观时尚，易于清洁和密封表面等等只是工程师在小家电设计中必须考虑到的部分特征。 英飞凌针对两个关键领域提供解决方案 采用IPD Protect的感应加热——该器件是一个与保护栅极驱动器封装在一起的RC-H5 IGBT，以及电机控制解决方案——该解决方案使用我们的节能型集成功率器件CIPOS智能功率模块和iMOTION集成设计平台
深入探索更多有关小家电市场不断变化的趋势以及在此白皮书中实现解决方案的更多信息！
推荐文档
In this webinar, we will visit a selected Gate Driver IC portfolio which shares a common set of strengths.
英飞凌定制栅极驱动器解决方案介绍视频解释了为什么栅极驱动器 IC 适用于多种应用，比如汽车、主要的家用电器、工业电机驱动装置、光伏逆变器、不间断电源 (UPS)、开关电源和高压照明。
您是否想了解更多关于英飞凌栅极驱动器的信息？请观看我们的介绍视频，熟悉我们的产品组合。
市场领先的 1200 V 绝缘体硅片电平转换栅极驱动器。本视频展示了英飞凌 SOI 产品优势。例如集成自举二极管、低电平转换损耗、节约空间和成本。
EiceDRIVER™ 电气隔离栅极驱动器采用独特无芯变压器 (CT) 技术，提供跨电气隔离信号传输。我们提供短路保护、100 kV/μs CMTI、有源米勒箝位、软关断和其他功能，该产品特别适用于驱动 SiC MOSFETs 和 GaN HEMT。
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.
We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.
