Ultra Low Noise RF Transistor BFP740FESD for 2.45 GHz WLAN Application

Open online SPICE simulator circuit link: rf_BFP740FESD_WLAN.tsc

Ultra Low Noise RF Transistor BFP740FESD for 2.45 GHz WLAN Application

- Input matching and DC blocking (C1)
- RF decoupling (C2, C3)
- Output matching and stability improvement (C4)
- Output matching and DC blocking (C5)
- DC bias (R1, R2)
- Low-frequency stability improvement (R3)
- Output matching and High-frequency stability improvement (R4)
- RF choke and Input matching (L1)
- RF choke and Output matching (L2)

The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction
wideband Bipolar RF Transistor (HBT) with an integrated ESD protection

This transistor provides high gain (16.63 dB@2.45 GHz) using Infineon Designer

Target application:
- Wireless Local Area Network (WLAN)