650 V synchronous Boost converter using gate driver IC GaN EiceDRIVER™ 1EDF5673K efficiently driving gallium nitride (GaN) HEMTs

Open online SPICE simulator circuit link: power_650VDC_synchronous_boost_single_channel_isolated_gan_gate_driver_IC_1EDF5673K.TSC

650 V synchronous Boost converter using gate driver IC GaN EiceDRIVER™1EDF5673K
efficiently driving gallium nitride (GaN) HEMTs

CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state. Besides,
due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may be
needed. The widely used RC-coupled gate driver fulfils these requirements, however it suffers from a duty-cycle
dependence of switching dynamics and the lack of negative gate drive in specific situations.
Infineon's GaN EiceDRIVER™ solves these issues with very low effort. The two output stages shown below enable
a zero “off" level to eliminate any duty-cycle dependence. In addition, the differential topology is able to provide
negative gate drive without the need for a negative supply voltage. However, it requires a floating supply voltage
not compatible with bootstrapping.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak currents
- Under voltage lockout