Infineon Designer powered by TinaCloud

600 V high-side and low-side gate driver IC IRS2301S

Open online SPICE simulator circuit link: power_600VDC_high_side_and_low_side_gate_driver_IRS2301S.tsc

600 V high-side and low-side gate driver IC IRS2301S

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak currents
- Under voltage lockout

The IRS2301S is a high voltage, high speed power MOSFET and IGBT driver IC with independent
high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS
technologies enable ruggedized monolithic construction. The logic input is compatible with
standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 600 V.

Other circuits

Technical Assistance

Gate Driver

Product Info: IGW50N65F5
Product Info: IRS2301S