200 V High Side and Low Side Gate Driver IC IR2011S

Open online SPICE simulator circuit link: power_200VDC_high_low_side_gate_driver_IR2011S.TSC

200 V High Side and Low Side Gate Driver IC IR2011S

The IR2011S is a high power, high speed power MOSFET driver with independent
high and low side referenced output channels. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature
a high pulse current buffer stage designed for minimum driver cross-conduction.
Propagation delays are matched to simplify use in high frequency applications.
The floating channel can be used to drive an N-channel power MOSFET in the
high side configuration which operates up to 200 volts. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized monolithic construction.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak currents
- Under-voltage lockout