IRF150DM115

综述

150 V single N-channel OptiMOS™ MOSFET in DirectFET™ package

The IRF150DM115 is available in a DirectFET™ package with OptiMOS™ 5. The double-side-cooled package with low parasitic inductance and profile design enables high power density designs.

Developed for customers looking to optimise their thermal design to get the highest power density and efficiency. Targeting power conversion in photovoltiac optimisers, cordless power tools and motor control.

特征描述

  • Double-side-cooled package
  • Low parasitic inductance
  • Low profile design
  • High current capability
  • 100% lead-free (no RoHS exemption)

优势

  • Enables designs with high power density
  • High efficiency
  • Minimized EMI
  • Optimized thermals
  • Board space reduction
  • Less device paralleling

潜在应用

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