IRFB812

综述

500V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

优势

 

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Normal level : Optimized for 10 V gate drive voltage
  • Industry standard through-hole power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered
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质量

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支持