2EDL8033G4B - Infineon Technologies

综述

120 V boot 3 A high and low side junction isolated gate drivers

The 2EDL8033G4B is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage and provides full 3 A current capability. The high-side bias voltage is generated using a bootstrap technique using an integrated bootstrap diode. The inputs of the driver are TTL logic compatible and can withstand input common mode swing from -10 V up to 20 V. Independent inputs allow controlling high- and low-side domains independently. Undervoltage lockout (UVLO) on both high- and low-side supplies forces the corresponding outputs low in case of insufficient supply.

The 2EDL8033G4B is available in SON-8 pins 4 mm x 4 mm.

特征描述

3 A & 4 A source / 6 A sink output current capability
120 V absolute maximum boot voltage
Integrated bootstrap diode
-10 V to 20 V input pin capability for increased robustness
-5 A output pin reverse current capability
-12 V absolute maximum negative voltage on HS
8 V to 17 V supply voltage operating range
UVLO for both high-side and low-side driver
Fast propagation delay (< 35 ns)
2 ns typical delay matching
Offered in SON-8 (4x4).
Specified from -40ºC to 125ºC operating junction temperature range

优势

Best in class driving capability with 3 A & 4 A source / 6 A sink output current capability
Helps in achieving better efficiency due to its strong source/ sink capability
Strong 6 A pull down for avoiding induced turn on
Tight propagation delay matching reduces dead time losses
Offered in small 4 x 4mm leadless package with industry standard pin-out
Integrated bootstrap diode reduces BOM cost and increases power density

潜在应用