2ED3147MC12L 6.5 A ， 5.7 kV (rms) 双通道隔离型栅极驱动器，具有死区时间控制和14.7 V欠压锁定功能，并通过UL 1577认证
EiceDRIVER™ Compact双通道隔离型栅极驱动器，拥有6.5 A 灌峰值输出电流和6 A拉峰值输出电流，采用14引脚DSO宽体封装，适用于驱动IGBT、MOSFET和SiC MOSFET。
它具有死区时间控制（DTC）功能，并支持每个通道独立运行。这使得它可被用作双通道低侧驱动器、双通道高侧驱动器或半桥栅极驱动器，且死区时间可配置。
特征描述
- For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
- 2300 V functional offset voltage capable for selected applications
- Galvanically isolated coreless transformer gate driver
- Up to 6.5 A typical peak output current
- 39 ns propagation delay
- 35 V absolute maximum output supply voltage
- High common-mode transient immunity CMTI > 200 kV/µs
- Active shutdown and short circuit clamping
- 3.3 V and 5 V input supply voltage
- Enable pin
- 具有迟滞功能的14.7 V/ 16 V欠压锁定（UVLO）保护
优势
- 输入输出之间的爬电距离：8 mm，通道之间的爬电距离：3.3 mm
- 严格控制IC之间的传输延迟偏差：最大8 ns
- 严格控制通道之间的传输延迟偏差：最大5 ns
- 双通道配置帮助减小产品尺寸
- 死区时间控制
- UL 1577认证：VISO = 6.84 kV (rms)，持续1 s；VISO = 5.7 kV (rms)，持续1 min
- IEC 60747-17认证（计划）：VIORM = 1767 V（峰值，加强绝缘）
Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers.
Learn more about the transformer driver ICs
Curious to learn more about how to make your gate driver designs simpler? Join us in this training where we will show you what to consider when selecting the gate driver for your application, go through the drive circuit step by step design, provide an outline of design considerations, while also taking the schematic and layout aspects into consideration!
Isolated gate drivers are electronic devices designed to drive the gates of power semiconductor devices. This training video will introduce the new EiceDRIVER™ X3 Compact 1ED314x family (single-channel) and 2ED314x family (dual-channel) galvanically isolated gate drivers and share its features, benefits, and the application positioning.
