IGO60R042D1
综述
600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
The IGO60R042D1 enables more compact topologies and increased efficiency at higher frequency operation.
It is certified through an extensive GaN-specific qualification process, exceeding industry standards.
Housed in the bottom-side cooled DSO-20-85 package, it is designed for optimal power dissipation required in modern data centers, server, telecom renewables, and numerous other applications.
特征描述
- E-mode HEMT – normally OFF
- Ultrafast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- JEDEC qualified (JESD47, JESD22)
- Low dynamic RDS(on)
- Bottom-side cooled
优势
- Improves system efficiency
- Improves power density
- Enables higher operating frequency
- System cost reduction savings
- Reduces EMI
潜在应用
- Industrial
- Telecom
- Datacenter SMPS based on the half-bridge topology
支持