IGO60R042D1

综述

600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

The IGO60R042D1 enables more compact topologies and increased efficiency at higher frequency operation.

It is certified through an extensive GaN-specific qualification process, exceeding industry standards.

Housed in the bottom-side cooled DSO-20-85 package, it is designed for optimal power dissipation required in modern data centers, server, telecom renewables, and numerous other applications.

特征描述

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Low dynamic RDS(on)
  • Bottom-side cooled

优势

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

潜在应用

支持