IGB110S10S1 CoolGaN™ Transistor 100 V G3 in PQFN 3x3, 8 mΩ
综述
The IGB110S10S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
特征描述
- 100 V e-mode power transistor
- Dual-side cooled package
- No reverse recovery charge
- Reverse conduction capability
- Low gate charge, low output charge
- Qualified according to JEDEC
优势
- Best-in-class power density
- Highest efficiency
- Improved thermal management
- Enabling smaller and lighter designs
- Excellent reliability
- Lowering BOM cost
支持
