IGB110S10S1 CoolGaN™ Transistor 100 V G3 in PQFN 3x3, 8 mΩ
综述
The IGB110S10S1 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
特征描述
- 100 V e-mode power transistor
- Dual-side cooled package
- No reverse recovery charge
- Reverse conduction capability
- Low gate charge, low output charge
- Qualified according to JEDEC
优势
- Best-in-class power density
- Highest efficiency
- Improved thermal management
- Enabling smaller and lighter designs
- Excellent reliability
- Lowering BOM cost
![IGB110S10S1](/export/sites/default/_images/product/power/CoolGaN/IGB070S10S1_IGB110S10S1_CoolGaN-Transistor-100-V-G3_PQFN_3x3_Combi.jpg_1811273109.jpg)
支持