IMZA120R030M1H CoolSiC™ 1200 V, 30 mΩ SiC Trench MOSFET in TO-247-4 package
The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Our SiC MOSFET in TO-247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.
特征描述
- Best in class switching and conduction losses
- Benchmark high threshold voltage, Vth > 4 V
- 0 V turn-off gate voltage for easy and simple gate drive
- Wide gate-source voltage range
- Robust and low loss body diode rated for hard commutation
- Temperature independent turn-off switching losses
- .XT interconnection technology for best-in-class thermal performance
优势
- Highest efficiency
- Reduced cooling effort
- Higher frequency operation
- Increased power density
- Reduced system complexity
