600 V CoolMOS™ CFD7 SJ MOSFET将性能提升到全新水准

2017-11-21 | 市场新闻

德国慕尼黑讯—凭借600 V CoolMOS™ CFD7，英飞凌科技推出最新的高压超结MOSFET技术。该600 V CoolMOS™ CFD7是CoolMOS 7系列的新成员。这款全新MOSFET满足了高功率SMPS市场对谐振拓扑的需求。它的LLC和ZVS PSFB等软开关拓扑具备业内领先的效率和可靠性。这使其非常适合 服务器、 电信设备电源和 电动汽车充电站等高功率SMPS应用。

 

该600 V CoolMOS CFD7的前身是CoolMOS CFD2。新MOSFET的效率比它的前身或竞争性产品高出1.45%之多。它不仅拥有快速开关技术的所有优势，还兼具高换相稳固性，同时不影响在设计过程中的轻松部署。该600 V CoolMOS CFD7拥有更低的栅极电荷（Qg）和更好的关断性能。此外，其反向恢复电荷（Qrr）比市场上的竞争性产品低69%之多。该600 V CoolMOS CFD7可为THD和SMD器件提供业内领先的解决方案，从而能够支持高功率密度解决方案。

 

供货

该600 V CoolMOS CFD7目前已实现量产，样品可供订购。更多信息请访问 www.infineon.com/cfd7。

Press Photos

  • The 600 V CoolMOS CFD7 is up to 1.45 percent more efficient than its predecessor or competitor offerings. It combines all of the advantages of a fast switching technology with high commutation ruggedness, without impacting the easy implementation in the design-in process.
    The 600 V CoolMOS CFD7 is up to 1.45 percent more efficient than its predecessor or competitor offerings. It combines all of the advantages of a fast switching technology with high commutation ruggedness, without impacting the easy implementation in the design-in process.
    ThinPAK_8x8_600V_CoolMOS_CFD7

    PNG | 1.74 mb | 1181 x 1118 px

  • The 600 V CoolMOS CFD7 is up to 1.45 percent more efficient than its predecessor or competitor offerings. It combines all of the advantages of a fast switching technology with high commutation ruggedness, without impacting the easy implementation in the design-in process.
    The 600 V CoolMOS CFD7 is up to 1.45 percent more efficient than its predecessor or competitor offerings. It combines all of the advantages of a fast switching technology with high commutation ruggedness, without impacting the easy implementation in the design-in process.
    TO220_600V_CoolMOS_CFD7

    PNG | 1.24 mb | 1347 x 1772 px