High gain and Low Noise Amplifier using BFP640FESD for GNSS application

Open online SPICE simulator circuit link: rf_BFP640FESD_GNSS.tsc

High gain and Low Noise Amplifier using BFP640FESD for GNSS application

- Input matching and DC blocking (C1)
- RF decoupling (C2, C3)
- Output matching (C4)
- Output matching and DC blocking (C5)
- DC bias (R1, R2)
- Low-frequency stability improvement (R3)
- Output matching and stability improvement (R4)
- Input matching (L1)
- Output matching (L2)

The BFP640FESD is a RF bipolar transistor based on SiGe:C technology that is part of
Infineon’s established sixth generation transistor family. Its ESD structure, high RF gain
and low noise figure characteristics make the device suitable for a wide range of wireless
applications. It remains cost competitive without compromising on ease of use.

This transistor provides high gain (20.4 dB@1575 MHz) using Infineon Designer

Target application:
- Global Navigation Satellite Systems (GNSS)