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600 V high-side and low-side gate driver IC IR2112S with shutdown

Open online SPICE simulator circuit link: power_600VDC_high_side_and_low_side_gate_driver_IR2112S.tsc

600 V high-side and low-side gate driver IC IR2112S with shutdown

The IR2112S is a high voltage, high speed power MOSFET and IGBT driver
with independent high- and low-side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable ruggedized monolithic
construction. Logic inputs are compatible with standard CMOS or LSTTL
outputs, down to 3.3 V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. Propagation
delays are matched to simplify use in high frequency applications. The floating channel
can be used to drive an N-channel power MOSFET or IGBT in the high-side
configuration which operates up to 600 V.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak currents
- Under-voltage lockout

Product Info: IR2112S

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