1200 V high-side/low-side gate driver IC EiceDRIVER™ 2ED1323S12P with AMC (Active Miller Clamp), SCC (Short Circuit Clamp) with 350 ns propagation delay

Open online SPICE simulator circuit link: power_1200VDC_high_side_and_low_side_gate_driver_2ED1323S12P.TSC

1200 V high-side/low-side gate driver IC EiceDRIVER™ 2ED1323S12P
with AMC (Active Miller Clamp), SCC (Short Circuit Clamp)

The 2ED132x family contains devices, which control IGBT or SiC MOSFET power devices with a maximum blocking
voltage of +1200 V in half bridge configurations. Based on the used SOI-technology there is an excellent
ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, the design
is very robust against parasitic latch up across the operating temperature and voltage range.
The two independent driver outputs are controlled at the low-side using two different CMOS resp. LSTTL
compatible signals, down up to 3.3V logic. The device includes an under-voltage detection unit with hysteresis
characteristic.
The 2ED132x has symmetric undervoltage lockout levels, which support strongly the integrated ultrafast
bootstrap diode. Additionally, the offline gate clamping function provides an inherent protection of the
transistors for parasitic turn-on by floating gate conditions, when the IC is not supplied via VCC

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Undervoltage lockout
- Bootstrap diode