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High Gain, High IP3 SiGe:C RF Transistor BFP640F for GPS LNA

Open online SPICE simulator circuit link: rf_BFP640F_AN179.TSC

High Gain, High IP3 GPS LNA using BFP640F SiGe:C Transistor


- Infineon Technologies BFP640F is a high gain, low noise
Silicon-Germanium-Carbon (SiGe:C) Heterojunction Bipolar
Transistor (HBT) suitable for a broad range of Low Noise
Amplifier (LNA) applications.

Summary of features:
- High gain low noise RF transistor
- Provides outstanding performance for a wide range of wireless applications
- Ideal for CDMA and WLAN applications
- Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz
- High maximum stable gain:Gms = 23 dB at 1.8 GHz
- Gold metallization for extra high reliability
- 70 GHz fT-Silicon Germanium technology
- Pb-free (RoHS compliant) package1)
- Qualified according AEC Q101

Target applications:
- As Low Noise Amplifier (LNA) in
- Satellite communication systems: Navigation systems (GPS, Glonass),
satellite radio (SDARs, DAB) and C-band LNB
- Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac,
WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth
- Multimedia applications such as mobile/portable TV, CATV, FM Radio
- 3G/4G UMTS/LTE mobile phone applications
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
as discrete active mixer, amplifier in VCOs and buffer amplifier

Technical Assistance
Simulate: Network Analysis
Other circuits
Application note: AN179
Product info: BFP640F