CoolSiC™肖特基二极管 1200V - Infineon Technologies

综述

新型第5代能够将效率和可靠性提高到一个新的水平

高效、紧凑和简单的三相逆变器系统的实施目前受限于硅器件在1200V电压下工作的高动态损耗。使用 600V/650V 设备的替代设计可以提高一部分效率。但是，它们需要以更复杂的 (3级) 拓扑为代价，3级拓扑具有复杂的控制方案和更多的功率组件。

产品

亮点

CoolSiC™ Schottky Diode 1200V combined with a Si HighSpeed 3 IGBT enables simpler 2-level topologies

它还可以降低 40％的硅IGBT开通损耗和EMI。此外，与基于硅的解决方案相比，改进热性能现在可以将结温降低15％，从而提高系统可靠性，而且在给定形状因子下有可能提高输出功率。

碳化硅二极管的静态损耗往往限制了硅 IGBT / 碳化硅二极管解决方案的优化潜力。为了解决这个问题，第5代二极管降低了正向电压和温度依赖性，从而减少了静态损耗并降低了性能代价。新型第5代针对太阳能逆变器、UPS系统、电机驱动器和三相SMPS。

特性

同类中较为优异的正向电压 (V_F)
无反向恢复电荷
V_F温和的正温度依赖性
同类中较为优异的的浪涌电流能力
卓越的热性能
额定高达 40A 的二极管

优势

超高的系统效率
在低开关频率下提高系统效率
在高开关频率下提高功率密度
更高的系统可靠性
降低 EMI

应用

Promotion banner for CoolSiC Schottky Diodes 1200V in D2PAK real2pin packaging.

1200 V Silicon Carbide Schottky diode in D2PAK real2pin

Trends in system compact designs call for high efficiency while using a small device package. The CoolSiC™ Schottky diode generation 5 1200 V now is available in D2PAK real2pin package with current ratings from 2 A to 20 A. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be substantially increased, by 40% or more. Other than negligible switching losses – the signature feature of SiC Schottkys – CoolSiC™ Generation 5 products come with best-in-class forward voltage (VF), the slightest increase of VF with temperature and highest surge current capability. The result is a series of products delivering market-leading efficiency and more system reliability at an attractive price.