650 V, 0.7 A High-side and Low-side Gate Driver IC 2ED2106S06F with Integrated Bootstrap Diode based on SOI Technology

Open online SPICE simulator circuit link: power_650VDC_high_side_low_side_gate_driver_SOI_2ED2106S06F.TSC

650 V, 0.7 A High-side and Low-side Gate Driver 2ED2106S06F with
Integrated Bootstrap Diode based on SOI Technology

650 V high and low side high speed power MOSFET and IGBT gate driver with typical 0.29 source current,
and 0.7 sink current in DSO-8 package. The DSO-14 package for bigger creepage is also
available: 2ED21064S06J.

Based on our SOI-technology, having excellent ruggedness and noise immunity against negative transient
voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all
temperature and voltage conditions.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Dead time / Shoot through prevention
- Under-voltage lockout
- Bootstrap diode