Infineon Extends Circuit Protection Portfolio with Low Dynamic Resistance and Ultra-Low Capacitance TVS Devices for High-Speed Data Interfaces

Jun 6, 2013 | Technology Media

Neubiberg, Germany – June 6, 2013 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced a series of Transient Voltage Suppression (TVS) devices offering best-in-class protection against Electrostatic Discharge (ESD) for electronic systems. With very-low dynamic resistance (Rdyn = 0.19Ω) and ultra-low capacitance (C = 0.4pF) the ESD102 TVS Diode (single line and multiline array) enable engineers to achieve strict requirements for ESD robustness and signal quality of the high-speed interfaces used in the latest generation smartphones and tablets.

Continuous miniaturisation of integrated circuits (ICs) pushes the required performance improvement. However, this miniaturisation causes an increased sensitivity of the IC regarding ESD events. Dedicated ESD protection devices are necessary to handle the ESD event before the destructive energy enters the IC input/output (I/O) and causes a short circuit. Infineon offers a broad portfolio of TVS diodes and arrays specifically designed to minimize risk of short circuits across the full range of computing and communications system applications.

The ESD102 series addresses TVS for the high-speed data interfaces – such as USB 3.0, GBit Ethernet, Firewire and HDMI links - used in desktop laptops, computers, consumer electronics and also in more and more smartphones. These data lines require robust protection with the smallest possible package size and lowest device capacitance. The new series provides protection that exceeds specifications of IEC61000-4-2, in either a 2-pin (for single line), 4-pin (for 2-line array) or 5-pin (for 4-line array) package. Leakage current is ≤ 50nA, contributing to longer system battery life. A dedicated pad layout keeps PCB layout simple and minimizes parasitic effects.

ESD102 Series Specifications

ESD102-U1-02ELS (Uni-directional TVS diode, 1-line, TSSLP-2-3 package), ESD102-U2-099L (Uni-directional TVS diode, 2-line, TSLP-4-10 package) and ESD102-U4-05L (Uni-directional TVS diode, 4-line, TSLP-5-2 package):

  • ESD / transient protection of high speed data lines exceeding:
    • IEC61000-4-2 (ESD): ≥ ±20 kV (air / contact)
    • IEC61000-4-4 (EFT): ≥2.5 kV / ≥50 A (5/50 ns)
    • IEC61000-4-5 (surge): 3 A (8/20 μs)
  • Maximum Working Voltage: V RWM = 3.3 V
  • Line Capacitance (I/O to GND): C L = 0.4 pF (typical)
  • Clamping Voltage: V CL = 8 V at I PP = 16 A (typical)
  • Dynamic Resistance: R DYN = 0.19 Ω (typical)
  • Reverse Current: I R = 1 nA at 3.3 V (typical)


Availability

The ESD102 Series devices and starter kits are now available. The TSSLP-2-3, TSLP-4-10 and TSLP-5-2 packages are fully compliant with RoHs and halogen-free directives.

Extensive ESD Protection Design Support

For assistance in ESD system robustness and faster protection design Infineon offers a comprehensive library of simulation models for TVS Diodes as well as expert consultation to supporting accurate selection of the protection device and circuit design.

For further information on Transient Voltage Suppressor (TVS) diodes from Infineon, please visit www.infineon.com/tvsdiodes

About Infineon

Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2012 fiscal year (ending September 30), the Company reported sales of Euro 3.9 billion with close to 26,700 employees worldwide. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY).

Information Number

INFPMM201306.051

Press Photos

  • The ESD102 TVS Diode enables engineers to achieve strict requirements for ESD robustness and signal quality of high-speed interfaces.
    The ESD102 TVS Diode enables engineers to achieve strict requirements for ESD robustness and signal quality of high-speed interfaces.
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