Source-down PQFN

OptiMOS™ Source-Down MOSFET family with industry-leading RDS(on) and superior thermal performance in an improved PQFN package

anchor

Overview

Infineon's OptiMOS™ MOSFET technology has an innovative and improved PQFN package with Source-Down technology. With the silicon flipped, the source potential connects to the PCB over the thermal pad. These are available in bottom-side cooling (BSC) and dual-side cooling (DSC) variants, and PQFN 3.3 mm x 3.3 mm and PQFN 5 mm x 6 mm sizes. Learn more about the features, benefits, and applications for OptiMOS™ MOSFETs.

Key Features

  • Low RDS(on) in a small package
  • Low gate charge
  • Reduced switching losses
  • Standard and logic-level gate drive

Products

About

Available in Standard and Center-Gate footprint options

Infineon offers two Source-Down footprint versions: 

  • Source-Down Standard-Gate: Based on the current PQFN 3.3 mm x 3.3 mm/PQFN 5 mm x 6 mm pinout configurations, this package simplifies the drop-in replacement of Drain-Down packages with the new Source-Down package.
  • Source-Down Center-Gate: The gate pin is moved to the center, enabling easy parallel configuration of multiple MOSFETs. With a larger drain-to-source creepage distance of 0.75 mm, it is possible to connect the gates of multiple devices on a single PCB layer. Moving the gate connection to the center also leads to a wider source area for improved electrical connection of devices.

Explore the dual-side cooling technology of the Source-down PQFN package.

Optimized thermal management with dual-cooling package

In the Source-Down package, active trenches on the source side of the silicon die generate heat, which is dissipated directly into the PCB through a thermal pad. This improves the RthJC of the product family by over 20%, from 1.8 K/W to 1.4 K/W. Additionally, the exposed top side improves RthJC,top from 20 K/W (for over-molded) down to 0.7 K/W. A heatsink on top of the device can take advantage of this low RthJC,top, enabling up to three times more power dissipation compared to an over-molded package.

Select the package best-suited for your needs from the broadest portfolio of MOSFETs.

Innovative Source-Down package portfolio

Infineon's OptiMOS™ Source-Down portfolio is available in PQFN 3.3 mm x 3.3 mm and PQFN 5 mm x 6 mm package options, with voltages ranging from 25 V to 150 V. Two footprint versions are available: 

  • Corner-Gate: Easy adoption into existing PCB designs 
  • Center-Gate: Optimized for paralleling. 

For superior thermal management and high power density, choose from bottom-side cooling (BSC) and dual-side cooling (DSC) options. 

Explore Infineon's MOSFET technology that delivers superior performance, reliability, and thermal management for a wide range of applications.

Available in Standard and Center-Gate footprint options

Infineon offers two Source-Down footprint versions: 

  • Source-Down Standard-Gate: Based on the current PQFN 3.3 mm x 3.3 mm/PQFN 5 mm x 6 mm pinout configurations, this package simplifies the drop-in replacement of Drain-Down packages with the new Source-Down package.
  • Source-Down Center-Gate: The gate pin is moved to the center, enabling easy parallel configuration of multiple MOSFETs. With a larger drain-to-source creepage distance of 0.75 mm, it is possible to connect the gates of multiple devices on a single PCB layer. Moving the gate connection to the center also leads to a wider source area for improved electrical connection of devices.

Explore the dual-side cooling technology of the Source-down PQFN package.

Optimized thermal management with dual-cooling package

In the Source-Down package, active trenches on the source side of the silicon die generate heat, which is dissipated directly into the PCB through a thermal pad. This improves the RthJC of the product family by over 20%, from 1.8 K/W to 1.4 K/W. Additionally, the exposed top side improves RthJC,top from 20 K/W (for over-molded) down to 0.7 K/W. A heatsink on top of the device can take advantage of this low RthJC,top, enabling up to three times more power dissipation compared to an over-molded package.

Select the package best-suited for your needs from the broadest portfolio of MOSFETs.

Innovative Source-Down package portfolio

Infineon's OptiMOS™ Source-Down portfolio is available in PQFN 3.3 mm x 3.3 mm and PQFN 5 mm x 6 mm package options, with voltages ranging from 25 V to 150 V. Two footprint versions are available: 

  • Corner-Gate: Easy adoption into existing PCB designs 
  • Center-Gate: Optimized for paralleling. 

For superior thermal management and high power density, choose from bottom-side cooling (BSC) and dual-side cooling (DSC) options. 

Explore Infineon's MOSFET technology that delivers superior performance, reliability, and thermal management for a wide range of applications.

Documents

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community ", "labelEn" : "Ask the community " }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions ", "labelEn" : "View all discussions " } ] }