Rapid 1 and Rapid 2 power silicon diodes fill the gap between the SiC diodes and emitter-controlled diodes and now come in common cathode configuration with up to 80A/650V, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.
- 1.35V temperature-stable forward voltage (V F)
- Highest softness-factor for ultimate softness and low EMI filtering
- Lowest I rrm to provide low turn-on losses on the boost switch
- For applications switching between 18kHz and 40kHz
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