Silicon Power Diode
Perfect cost/performance balance, targeting high efficiency applications switching between 18kHz and 100kHz
The Silicon Power Rapid Diode family complements Infineon’s existing high power 600V/650V diode portfolio by filling the gap between SiC diodes and previously released emitter-controlled diodes. Rapid 1 and Rapid 2 diodes are optimized to have excellent compatibility with CoolMOS™ and high speed IGBT (Insulated Gate Bipolar Transistor) such as the TRENCHSTOP™ 5 and HighSpeed 3.
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