BFP720FESD

概要

The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

特長

  • Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,  1.5 kV ESD robustness (HBM) due to integrated protection circuits
  • High transition frequency fT = 45 GHz to enable best in class noise figure at high frequencies: NFmin = 0.8 dB at 5.5 GHz, 3V, 5 mA
  • High gain Gms =  22 dB at 5.5 GHz, 3V, 15 mA
  • OIP3 = 21 dBm at 5.5 GHz, 3V, 15 mA
  • Low profile and small form factor leadless package
  • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

推奨アプリケーション例

  • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB
  • Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
  • Multimedia applications such as portable TV, CATV, FM Radio
  • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
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