NPN Silicon RF Transistor for ESD protected high gain low noise amplifier
- Excellent ESD performance typical value 1000 V (HBM)
- Outstanding Gms = 21.5 dB
- Noise Figure F = 0.9 dB
- Gold metallization for high reliability
- SIEGET® 45 - Line
- Pb-free (RoHS compliant) package
- Qualification report according to AEC-Q101 available
- Wireless Communications
- For amplifier and oscillator applications in RF Front-end
Find an answer to your question
Technical Assistance Center (TAC)
Infineon welcomes your comments and questions.
If you have any questions concerning our products, please fill out the following form. Your inquiry will be sent to the appropriate specialist who will be in touch with you as soon as possible.
You will receive a confirmation E-mail to validate your address in our system. Any attached file to the reply which will help to support your inquiry is highly appreciated.