High Power RF GaN-SiC HEMT, 400 W, 50 V, 960-1215 MHz
- GaN-SiC HEMT technology
- Broadband internal input matching
- Typical Pulsed CW performance, 960 - 1215 MHz, 50 V,
- Output power = 410 W
- Drain Efficiency = 70%
- Gain = 19 dB
- Pulse width = 128 μs
- Duty cycle = 10%
- Pb-free and RoHS compliant
- Evaluation board available: LTN/GTVA104001FA E1 (960-1215 MHz)
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