UHF & L Band (400 MHz to 1400 MHz)
Infineon offers a family of GaN on SiC and LDMOS rugged RF power transistors specifically designed for pulsed applications in the 400 MHz to 1400 MHz frequency band. Our RF power transistors offer high gain, gold wire bonding, excellent efficiency and high power, enabling the design of compact, highly efficient amplifiers. Our advance high-volume, fully-automated assembly and test lines allows us to offer products with unsurpassed reliability and consistency.
- Highest power density
- Excellent efficiency
- Excellent linearity
- High ruggedness
- Low thermal resistance
- High RF consistency
- High reliability
Our Enhanced Electrothermal LDMOS models are available for many of our devices on two platforms
- Keysight Technologies Advanced Design System™ (ADS 2011 or higher)
- NI AWR Design Environment™ Microwave Office (Version 10.02 or higher)
To obtain an ELMO Design Kit, please email us stating which kit you are interested in.
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Technical Assistance Center (TAC)
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