High Power RF LDMOS FET, 12 W, 50 V, 500 – 1400 MHz
- Target pulsed CW performance at 821 MHz, 48 V
- Output power = 12 W P 1dB
- Efficiency = 62%
- Gain = 22 dB
- Capable of withstanding a 10:1 load mismatch at 50 V, 12 W (CW) output power
- Integrated ESD protection
- Human Body Model class 1B (per ANSI/ESDA/JEDEC JS-001)
- Excellent thermal stability
- Pb-free and RoHS-compliant
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